maximum ratings and thermal characteristics (t a = 25? unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 v gate-source-voltage v gs 20 v continuous drain current t j = 150? t a = 25? i d 2.5 a pulsed drain current (1) i dm 10 a maximum power dissipation (2) t a = 25? 1.25 t a = 70? p d 0.80 w operating junction and storage temperature range t j , t stg 55 to +150 ? maximum junction-to-ambient thermal resistance (2) r ja 100 ?/w notes: (1) pulse width limited by maximum junction temperature. (2) surface mounted on fr4 board, (1?x 1? 2oz. cu) GF2304 n-channel enhancement-mode mosfet v ds 30v r ds(on) 0.117 ? i d 2.5a 5/3/01 features ?advanced trench process technology high density cell design for ultra-low on-resistance ?popular sot-23 package with copper lead-frame for superior thermal and electrical capabilities ?compact and low profile mechanical data case: sot-23 plastic package weight: approx. 0.008g marking code: 04 to-236ab (sot-23) 0.079 (2.0) 0.037 (0.95) 0.035 (0.9) 0.031 (0.8) 0.037 (0.95) mounting pad layout t rench g en f et pin configuration 1. gate 2. source 3. drain max. .004 (0.1) 1 2 3 top view .020 (0.51) .015 (0.37) .118 (3.0) .110 (2.8) .055 (1.40) .047 (1.20) .098 (2.5) .091 (2.3) .041 (1.03) .035 (0.89) .041 (1.03) .035 (0.89) .007 (.180) .003 (.085) .020 (0.51) .015 (0.37) .020 (0.51) .015 (0.37) .047 (1.20) .035 (0.90) dimensions in inches and (millimeters)
GF2304 n-channel enhancement-mode mosfet v ds 30v r ds(on) 0.117 ? i d 2.5a electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage bv dss v gs = 0v, i d = 250 a30 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 v gate-body leakage i gss v ds = 0v, v gs = 20v 100 na zero gate voltage drain current i dss v ds = 30v, v gs = 0v 0.5 a v ds =30v, v gs =0v, t j =55 c 10 on-state drain current (1) i d(on) v ds 4.5v, v gs = 10v 6 a v ds 4.5v, v gs = 4.5v 4 drain-source on-state resistance (1) r ds(on) v gs = 10v, i d = 2.5a 0.096 0.117 ? v gs = 4.5v, i d = 2.0a 0.135 0.190 forward transconductance (1) g fs v ds = 4.5v, i d = 2.5a 4.6 s dynamic total gate charge q g 3.7 10 gate-source charge q gs v ds = 15v, v gs = 10v 0.5 nc gate-drain charge q gd i d = 2.5a 0.6 turn-on delay time t d(on) 620 rise time t r v dd = 15v, r l = 15 ? 8.8 30 turn-off delay time t d(off) i d 1a, v gen = 10v 26 35 ns fall time t f r g = 6 ? 2.4 20 input capacitance c iss v gs = 0v 163 output capacitance c oss v ds = 15v 27 pf reverse transfer capacitance c rss f = 1.0mh z 9 source-drain diode maximum diode forward current i s 2.1 a diode forward voltage v sd i s = 1.25a, v gs = 0v 0.82 1.2 v note: (1) pulse test; pulse width 300 s, duty cycle 2% g d s v in v dd v gen r g r d v out dut input, v in t d(on) output, v out t on t r t d(off) t off t f inverted 90% 10% 10% 90 % 50% 50% 10% 90% pulse width switching test circuit switching waveforms
GF2304 n-channel enhancement-mode mosfet 0 2 4 6 10 01 2 3 4 5 i d -- drain-to-source current (a) v ds -- drain-to-source voltage (v) 0 0.06 0.12 0.18 02 4 6 8 10 fig. 4 ?on-resistance vs. drain current r ds(on) -- on-resistance ( ? ) i d -- drain current (a) 0 012 345 2 6 8 4 10 i d -- drain source current (a) v gs -- gate-to-source voltage (v) 8 2 0 8 10 6 4 01 34 2 v gs -- gate-to-source voltage (v) q g -- gate charge (nc) fig. 5 ?gate charge v ds = 15v i d = 2.5a 10v v ds = 10v 25 c 0 20 40 60 80 100 120 140 160 180 200 220 05 15 20 25 30 10 c -- capacitance (pf) v ds drain-to-source voltage (v) fig. 3 ?capacitance f = 1 mhz v gs = 0v v gs = 5v, 6v, 7v, 8v, 10v 2.5v 4.5v 3.5v 3.0v 4.0v -- 55 c t j = 125 c c oss c rss c iss v gs = 4.5v ratings and characteristic curves (t a = 25 c unless otherwise noted)
GF2304 n-channel enhancement-mode mosfet ratings and characteristic curves (t a = 25 c unless otherwise noted) 1 10 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 t j = 125 c fig. 7 source-drain diode forward voltage 25 c --55 c v gs = 0v i s -- source current (a) v sd -- source-to-drain voltage (v) fig. 6 on-resistance vs. gate-to-source voltage 0 0.1 0.2 0.4 0.3 2 r ds(on) -- on-resistance ( ? ) v gs -- gate-to-source voltage (v) 46810 t j = 125 c 25 c 35 37 39 41 43 45 -- 50 -- 25 25 50 75 100 125 0 fig. 8 breakdown voltage vs. junction temperature 150 i d = 250 a bv dss -- breakdown voltage (v) t j -- junction temperature ( c) -- 50 -- 25 25 50 75 100 125 0 0.6 0.8 1 1.2 1.4 1.6 fig. 9 threshold voltage 150 i d = 250 a v gs(th) -- gate-to-source threshold voltage (v) t j -- junction temperature ( c) i d = 2.5a
GF2304 n-channel enhancement-mode mosfet ratings and characteristic curves (t a = 25 c unless otherwise noted) fig. 13 maximum safe operating area 0.0001 0.001 0.01 0.01 0.001 0.1 0.1 1 1 10 100 i d -- drain current (a) v ds -- drain-source voltage (v) r ja (norm) -- normalized thermal impedance pulse duration (sec.) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -- 50 -- 25 25 50 75 100 125 0 fig. 10 on-resistance vs. junction temperature 150 v gs = 10v i d = 2.5a r ds(on) on-resistance (normalized) t j -- junction temperature ( c) single pulse 0.001 0.01 0.1 0 0.01 0.1 0.1 1 1 10 100 10 100 5 10 15 20 1 10 100 fig. 12 power vs. pulse duration power (w) pulse duration (sec.) single pulse r ja = 100 c/w t a = 25 c v gs = 10v single pulse r ja = 100 c/w t a = 25 c r ds(on) limit 100 s 1ms 10ms 100ms 1s dc d = 0.5 0.2 0.01 0.1 t 1 t 2 p dm 1. duty cycle, d = t 1 /t 2 2. r ja (t) = r ja(norm) *r ja 3. r ja = 100 c/w 4. t j - t a = p dm * r ja (t) 0.05 0.02 fig. 11 thermal impedance
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